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| QSD2030 PLASTIC SILICON PHOTODIODE PACKAGE DIMENSIONS 0.195 (4.95) FEATURES * PIN Photodiode * Package type: T-1 3/4 (5mm lens diameter) * Wide Reception Angle, 40 * Package material and color: Clear epoxy 0.040 (1.02) NOM REFERENCE SURFACE 0.305 (7.75) * High Sensitivity * Peak Sensitivity = 880 nm 0.800 (20.3) MIN 0.050 (1.25) CATHODE 0.100 (2.54) NOM 0.240 (6.10) 0.215 (5.45) 0.020 (0.51) SQ. (2X) NOTES: 1. Dimensions for all drawings are in inches (mm). 2. Tolerance of .010 (.25) on all non-nominal dimensions unless otherwise specified. 1. Derate power dissipation linearly 1.33 mW/C above 25C. 2. RMA flux is recommended. 3. Methanol or isopropyl alcohols are recommended as cleaning agents. 4. Soldering iron 1/16" (1.6mm) minimum from housing. SCHEMATIC CATHODE ANODE ABSOLUTE MAXIMUM RATINGS Parameter Operating Temperature Storage Temperature Soldering Temperature (Iron)(2,3,4) Soldering Temperature (Flow)(2,3) Reverse Breakdown Voltage Power Dissipation(1) (TA = 25C unless otherwise specified) Symbol TOPR TSTG TSOL-I TSOL-F VBR PD (TA =25C) SYMBOL PS SR Rating -40 to +100 -40 to +100 240 for 5 sec 260 for 10 sec 50 100 Unit C C C C V mW ELECTRICAL / OPTICAL CHARACTERISTICS PARAMETER TEST CONDITIONS MIN TYP MAX UNITS Peak Sensitivity Wavelength Wavelength Sensitivity Range Reception Angle Forward Voltage IF = 80 mA Reverse Dark Current VR = 20 V, Ee = 0 Reverse Light Current Ee = 0.5 mW/cm2, VR = 5 V, = 950 nm Capacitance VR = 0, f = 1 MHz, Ee = 0 Rise Time VR = 5 V, RL = 50 Fall Time = 950 nm VF ID IL C tr tf -- 400 -- -- -- 15 -- -- -- 880 -- 20 1.3 -- 25 60 5 5 -- 1100 -- -- 5 -- -- -- nm nm Deg. V nA A pF ns 10/31/01 |
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